1 1 M54513FP 8-unit 50ma transistor array sink type 2012.may pin configuration description M54513FP are eight-circuit transistor arrays. the circuits are made of npn transistors. both the semicon- ductor integrated circuits perform high-current dr iving with extremely low input- current supply. features ? high breakdown voltage bvceo R 40v ? synchronizing current (ic(max) = 50ma) application driving of digit drives of indication elements (leds and lamps) with small signals function the M54513FP each have eight circuits consisting of npn transistors. these ics have resistance of 2k at inputs and of 13.6k between the base and emitter. the gnd is used in common in each circuit. the transistors allow synchronous flow of 50ma collector current. a maximum of 40v voltage can be applied between the collector and emitter. package type 20p2n-a 3 4 5 6 7 8 9 10 18 17 16 15 14 13 12 11 o2 o3 o4 o5 o6 o7 o8 in2 in3 in4 in5 in6 in7 in8 gnd nc output input 2 19 o1 in1 1 20 nc nc nc : no connection circuit diagram the eight circuits share the gnd. the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : output input gnd 2k 13.6k ma 50 current per circuit output, l collector current i c ?55 +125 storage temperature t stg ?20 +75 operating temperature t opr w 1.10 ta = 25 c, when mounted on board power dissipation p d v -0.5 +10 input voltage v i v ?0.5 +40 output, h collector-emitter voltage v ceo unit ratings conditions parameter symbol absolute maximum ratings (unless otherwise noted, ta = ?20 ~ +75 c)
8-unit 50ma transistor array sink type M54513FP 2 2012.may note 1 test circuit 50 c l r l v o pg input output measured device (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 s, tr = 6ns, tf = 6ns, zo = 50 vp = 2.5vp-p (2) output conditions : rl = 300 , vo = 10v (3) electrostatic capacity cl includes floating capacitance at connections and input capacitance at probes timing diagram output input 50% 50% on 50% 50% off v ?h? input voltage v ih v 0.2 0 ?l? input voltage v il 8 2 ma 30 0 collector current i c v 40 0 output voltage v o max typ min unit limits parameter symbol recommended operating conditions (unless otherwise noted, ta = ?20 ~ +75 c) *: the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are ob tained under any conditions. switching characteristics (unless otherwise noted, ta = ?20 ~ +75 c) v i = 2.5v, i c = 30ma v i = 2v, i c = 10ma - - 200 80 v ce = 4v, i c = 30ma, ta = 25 dc amplification factor h fe ma 1.7 0.85 ? v i = 2.5v input current i i 170 70 ? mv 100 25 ? collector-emitter saturation voltage v ce(sat) v ? ? 40 i ceo = 100 a collector-emitter breakdown voltage v (br)ceo max typ min unit limits test conditions parameter symbol electrical characteristics (unless otherwise noted, ta = ?20 ~ +75 c) ? 1200 ? turn-off time t off ? 65 ? c l = 15pf(note 1) turn-on time t on max typ min unit limits test conditions parameter symbol
8-unit 50ma transistor array sink type M54513FP 3 2012.may collector current ic (ma) grounded emitter transfer characteristics input voltage v i (v) 0 0.5 1.0 1.5 2.0 0 output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) 0 0.05 0.10 0.15 0.20 0 ta=25 ta=-20 ta=75 10 20 30 40 v i =2v input characteristics input voltage v i (v) 0 0 1 3 4 ta=75 2 ta=-20 ta=25 input current i i (ma) typical characteristics thermal derating factor characteristics ambient temperature ta ( ) power dissipation pd (w) 0255075100 0 0.5 1.0 1.5 dc amplification factor collector current characteristics collector current ic (ma) dc amplification factor hfe 10 7 ta=25 ta=-20 ta=75 v ce =4v 5 3 2 2 10 1 7 5 3 2 10 7 5 3 2 2 10 1 7 5 3 2 10 0 10 20 30 40 ta=25 ta=-20 ta=75 v ce =4v 50 2.0 10 3 50 5 24 810 6
8-unit 50ma transistor array sink type M54513FP 4 2012.may package outline
8-unit 50ma transistor array sink type M54513FP 5 2012.may ? 2012 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that troub le may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ?these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belong ing to mitsubishi electric corporation or a third party. ?mitsubishi electric corporation as sumes no responsibility for any damage, or infringement of any third- party?s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ?all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no re sponsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor ho me page (http://www.mitsub ishielectric.com/). ?when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsib ility for any damage, liability or other loss resulting from the information contained herein. ?mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mi tsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ?the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in whole or in part these materials. ?if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re-export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ?please contact mitsubishi electric corporati on or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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